Data

I. Work supported by NSF DMREF #1534221

  1. Band structure, effective mass, and dielectric constants of Boron Arsenide

    • Relevant publication: K. Bushick, K. Mengle, N. Sanders, and E. Kioupakis, Band structure and carrier effective masses of boron arsenide: effects of quasiparticle and spin-orbit coupling corrections, Applied Physics Letters 114, 022101 (2019). [Link][arXiv]

  2. Strain effects on the band structure and mobility of Boron Arsenide

    • Relevant publication: K. Bushick*, S. Chae*, Z. Deng, J. T. Heron, and E. Kioupakis, Boron Arsenide Heterostructures: Lattice-Matched Heterointerfaces, and Strain Effects on Band Alignments and Mobility, npj Computational Materials 6, 3 (2020). [Link] [arXiv]

  3. Direct and phonon-assisted optical properties of Boron Arsenide

    • Relevant publication: B. Song*, K. Chen*, K. Bushick*, K. A. Mengle, F. Tian, G. A. Gamage, Z. Ren, E. Kioupakis, G. Chen, Optical properties of cubic boron arsenide, Applied Physics Letters 116, 141903 (2020). [Link]

  4. Lattice constants, enthalpy of mixing, and band gap of wurtzite and zincblende BInGaN alloys

    • Relevant publication: K. P. Greenman, L. D. Williams, and E. Kioupakis, Lattice-Constant and Band-Gap Tuning in Wurtzite and Zincblende BInGaN Alloys, J. Appl. Phys. 126, 055702 (2019). [arXiv][Link]

  5. Wurtzite BInGaN alloys nearly lattice-matched to GaN: thermodynamic transition temperature, lattice constants, band gap, and hole localization energy

    • Relevant publication: L. Williams and E. Kioupakis, BInGaN alloys nearly-lattice-matched to GaN for high-power high-efficiency visible LEDs, Applied Physics Letters 111, 211107 (2017). [Link] [arXiv]

  6. Wurtzite BAlGaN alloys nearly lattice-matched to AlN: thermodynamic transition temperature, lattice constants, band gap, and valence-band crystal-field splitting

    • Relevant publication: L. D. Williams and E. Kioupakis, BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs, Applied Physics Letters 115, 231103 (2019). [Link] [arXiv]

  7. Thermal conductivity of AlGaN alloys as a function of composition, crystallographic orientation, and temperature

    • Relevant publication: S. Dagli, K. A. Mengle, and E. Kioupakis, Thermal conductivity of AlN, GaN, and AlxGa1-xN alloys as a function of composition, temperature, crystallographic direction, and isotope disorder from first principles. arXiv:1910.05440 [arXiv]

  8. Atomically thin GaN quantum wells in AlN barriers: band gap, exciton binding energy, and exciton lifetime at 300 K as a function of well and barrier thickness

    • Relevant publications: D. Bayerl and E. Kioupakis, Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells, Appl. Phys. Lett 115, 131101 (2019) [Link], and D. Bayerl, S.M. Islam, C. M. Jones, V. Protasenko, D. Jena, and E. Kioupakis, Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures, Applied Physics Letters 109, 241102 (2016). [Link]